IMBG120R140M1HXTMA1

REMARK: IR (Infineon Technologies) IMBG120R140M1HXTMA1 is available at chipnets.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

Specification

Type	Description
Series	CoolSiC™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1.2 kV
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	189mOhm @ 6A, 18V
Vgs(th) (Max) @ Id	5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	13.4 nC @ 18 V
Vgs (Max)	+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds	491 pF @ 800 V
FET Feature	Standard
Power Dissipation (Max)	107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

BUYING OPTIONS

Stock Status: 932

Minimum: 1

Quantity	Unit Price	Ext. Price
Price is not available, please RFQ

Freight calculation

US $40 by FedEx.

Arrive in 3-5 days

Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately

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