Microsemi / 2N6849
Image is for reference, please contact us to get the real picture
2N6849
| Manufacturer Part Number: | 2N6849 |
| Manufacturer: | Microsemi |
| Part of Description: | MOSFET P-CH 100V 6.5A TO39 |
| Datasheets: | 2N6849 Datasheets |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
- REMARK
- Microsemi 2N6849 is available at chipnets.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.
Specification
| Type | Description |
|---|---|
| Series | - |
| Package | Bulk |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-39 |
| Package / Case | TO-205AF Metal Can |
Stock Status: Same Day Shipping
Minimum: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
Price is not available, please RFQ |
||
Freight calculation
US $40 by FedEx.
Arrive in 3-5 days
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately
Added to cart!
This item has been added to your cart.