BSZ120P03NS3EGATMA1

REMARK: Rochester Electronics BSZ120P03NS3EGATMA1 is available at chipnets.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

Specification

Type	Description
Series	OptiMOS™
Package	Bulk
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.1V @ 73µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	3.36 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerTDFN

BUYING OPTIONS

Stock Status: 14625

Minimum: 1

Quantity	Unit Price	Ext. Price
Price is not available, please RFQ

Freight calculation

US $40 by FedEx.

Arrive in 3-5 days

Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately

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