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Rochester Electronics / NTD5802NT4G

NTD5802NT4G

Manufacturer Part Number: NTD5802NT4G
Manufacturer: Rochester Electronics
Part of Description: POWER FIELD-EFFECT TRANSISTOR, 1
Datasheets: NTD5802NT4G Datasheets
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
Rochester Electronics NTD5802NT4G is available at chipnets.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

Specification
Type Description
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C16.4A (Ta), 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5.025 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 93.75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
BUYING OPTIONS

Stock Status: 762

Minimum: 1

Quantity Unit Price Ext. Price

Price is not available, please RFQ

Freight calculation

US $40 by FedEx.

Arrive in 3-5 days

Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 150$,Overweight will be charged separately

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